This course introduces the basic physics of semiconductors, covering electrical conductivity, carrier statistics, and energy band theory. It then applies these fundamentals to analyze the operation and characteristics of essential devices: the PN junction diode and the MOSFET. The focus is on linking microscopic material properties to the electrical behavior of key electronic components.
Unit 1:Electrical Conductivity of materials
Unit 2:Carrier concentration, mobility, and doping in semiconductor
Unit 3:Carrier distribution functions (Maxwell–Boltzmann, Fermi–Dirac)
Unit 4:Energy band theory and classification of materials
Unit 5:PN junction diode: operation and I–V characteristics
Unit 6:Breakdown mechanisms: avalanche and tunneling
Unit 7:MOSFET fundamentals: structure and operation
The course is organized into five major modules, each consisting of several short lessons.
Each lesson is presented as a video of approximately 10–30 minutes, allowing learners to study at their own pace.
After each chapter, an optional quiz is provided for learners to assess their understanding of the course content.
This course is designed primarily for third-year undergraduate students or above majoring in Electrical Engineering, Electronics Engineering, or related disciplines.
Students are recommended to have a basic understanding of the following subjects before taking this course: