Enrollment Now OpenComing in the Second Half of 2027
This course introduces the fundamentals of MOSFET devices, CMOS digital logic, and basic memory technologies used in modern integrated circuits. Learners build an end-to-end understanding of how MOSFETs form the foundation for CMOS logic gates, which in turn serve as the building blocks for memory cells and arrays. Starting from individual transistor operation, the course progresses to CMOS inverters and gates, then shows how the semiconductor industry uses these to create SRAM/DRAM cells and non-volatile memories like Flash, MRAM, and ReRAM—revealing the practical pathway from device physics to high-volume IC manufacturing
Course Objectives
1. Introduce MOSFETs as the core of CMOS technology.
2. Demonstrate CMOS logic gate design and analysis.
3. Introduce memory technologies built using MOSFET/CMOS blocks.
Course Outcomes
By course end, learners will be able to:
1. Explain MOSFET structure, I-V characteristics, and key parameters; analyse CMOS inverters/gates for noise margins, delay, and power.
2. Describe the operation of volatile and non-volatile memories and explain their roles within the overall IC memory hierarchy.
Dr. Akhil K Ramesh
Akhil received a Joint PhD degree from IIT Delhi and NYCU Taiwan. He was also conferred a Master’s Degree in VLSI and Embedded System from CUSAT and has clean room experience from world class laboratories such as TSRI. His main research focus is on nanoelectronics and nanofabrication. During PhD, he was involved in the fabrication and development of spintronics based memories and sensing devices and skilled in magnetic and FEM simulations. Currently researching on Flexible spintronic devices
單元 1:Fundamentals of MOSFETs
單元 2:MOSFET Modeling and Scaling
單元 3:CMOS Logic Fundamentals
單元 4:Introduction to Memory Technology
單元 5:Volatile Memories
單元 6:Non-Volatile and Emerging Memories
This course provides a systematic introduction to MOSFET devices, CMOS digital circuits, and semiconductor memory technologies, illustrating how these fundamental technologies are integrated to form modern integrated circuits.
The course begins with the structure, operating principles, and electrical characteristics of MOSFETs, followed by the analysis and design of CMOS inverters and basic logic gates. Building upon these foundations, learners will explore how CMOS circuits are used to construct memory cells and arrays, including both volatile memories (SRAM and DRAM) and non-volatile memories such as Flash memory, MRAM, and ReRAM.
Through lectures and practical examples, students will gain a comprehensive understanding of the relationships among semiconductor devices, digital logic circuits, and memory architectures, establishing a solid foundation for further study in integrated circuit design and semiconductor technologies.
The course is organized into five major modules, each consisting of several short lessons.
Each lesson is presented as a video of approximately 10–30 minutes, allowing learners to study at their own pace.
After each chapter, an optional quiz is provided for learners to assess their understanding of the course content.
Each quiz consists of multiple-choice questions with four options. All questions are based on the information covered in the course videos.
Learners who achieve a total score of 60 points or above will be eligible to download a Certificate of Completion (a fee is required for certificate issuance).
This course is designed primarily for third-year undergraduate students or above majoring in Electrical Engineering, Electronics Engineering, or related disciplines.
Students are recommended to have a basic understanding of the following subjects before taking this course: